Hafnium oxide (HfO2) sputtering target CAS 12055-23-1

Hafnium oxide (HfO2) sputtering targets

Purity: 99.99%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length: <500mm, Width: <250mm, Thickness: >1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molecular Weight: 210.49g/mol., Density: 9.68g/cm3, Melting Point: 2758°C, , Softening temp. : ~1100- 1500°C, Boiling Point : 5400°C, Bulk Density; 1922-2883 kg/m3, Solubility In Water, insoluble Appearance: white powder

Hafnium oxide (HfO2) is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of approximately 6 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal.
Hafnium oxide (HfO2) is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride.

Applications:
Hafnium oxide (HfO2) is a high-index, low absorption material, used in optical coatings, and as a high-k dielectric in DRAM capacitors, typical applications include near-UV laser AR and dielectric mirror designs. Hafnium-based oxides are currently leading candidates to replace silicon oxide as a gate insulator in field effect transistors. The advantage for transistors is its high dielectric constant: The dielectric constant of HfO2 is 15.6, whereas the dielectric constant of SiO2 is only 3.9.

The compound appears to have been chosen by both IBM and Intel as a substrate for future integrated circuits, where it may help in the continuing effort to increase logic density and clock speeds, or to lower power consumption, in computer processors.
Because of its very high melting point, hafnia is also used as a refractory material in the insulation of such devices as thermocouples, where it can operate at temperatures up to 2500 °C

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