Silicon carbide (SiC) targets CAS 409-21-2

Silicon carbide (SiC) sputtering targets

Purity: 99.5%

Sputtering Targets : Diameter: 355.6mm (14") max. 

Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, 

if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.

Application:

Abrasive and cutting tools; Structural material; Automobile parts; Foundry crucibles; Electric systems; Electronic circuit elements; Power electronic devices; LEDs; Astronomy; Thin filament pyrometry; Heating elements; Nuclear fuel cladding; Nuclear fuel particles; Jewelry; Steel production; Catalyst support; Carborundum printmaking; Graphene production

Molar mass: 40.10 g·mol−1
Appearance: Yellow to green to bluish-black, iridescent crystals
Density: 3.21 g·cm−3 (all polytypes)
Melting point: 2,730 °C (4,950 °F; 3,000 K) (decomposes)

We also supply below carbide sputtering targets material:
 
Chromium Carbide Cr2C3, CrC
 
Hafnium Carbide  HfC
 
Niobium Carbide  NbC
 
Silicide Carbide  SiC
 
Tantalum Carbide  TaC
 
Titanium Carbide  TiC
 
Tungsten Carbide  WC
 
Vanadium Carbide  VC
 
Zirconium Carbide  ZrC
 
Tantalum Hafnium Carbide   Ta4HfC5